11 June 2013 Infrared emitters and photodetectors with InAsSb bulk active regions
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Bulk unrelaxed InAsSb alloys with Sb compositions up to 44 % and layer thicknesses up to 3 µm were grown by molecular beam epitaxy. The alloys showed photoluminescence (PL) energies as low as 0.12 eV at T = 13 K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T= 80 and 150 K suggested large absorption and carrier lifetimes sufficient for the development of long wave infrared detectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.
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Ding Wang , Ding Wang , Youxi Lin, Youxi Lin, Dmitry Donetsky, Dmitry Donetsky, Gela Kipshidze , Gela Kipshidze , Leon Shterengas, Leon Shterengas, Gregory Belenky, Gregory Belenky, Stefan P. Svensson, Stefan P. Svensson, Wendy L. Sarney, Wendy L. Sarney, Harry Hier, Harry Hier, "Infrared emitters and photodetectors with InAsSb bulk active regions", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870410 (11 June 2013); doi: 10.1117/12.2016082; https://doi.org/10.1117/12.2016082

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