11 June 2013 Multiwafer production of epitaxy-ready 4" GaSb: substrate performance assessments pre- and post-epitaxial growth
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Abstract
Bulk 4" GaSb crystal growth methods based on the Czochralski technique are detailed which deliver highly mono-crystalline substrates that are characterized by low dislocation densities. The latest developments in epitaxy-ready surface finishing will be described and results presented for 4” GaSb substrates processed on a large format, commercial multiwafer polishing platform. Bulk material quality assessments will be made and the surface condition of bare substrates and epitaxial material grown on top of 4" GaSb substrates will be assessed by various surface analytical techniques. We will comment on the available production capacity for 4" GaSb and remark on the scaling challenges that will be required to support the anticipated increase in demand for large diameter GaSb substrates.
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Mark J. Furlong, Mark J. Furlong, Rebecca Martinez, Rebecca Martinez, Sasson Amirhaghi, Sasson Amirhaghi, Andrew Mowbray, Andrew Mowbray, Brian Smith, Brian Smith, Dmitri Lubyshev, Dmitri Lubyshev, Joel M. Fastenau, Joel M. Fastenau, Amy W. K. Liu, Amy W. K. Liu, } "Multiwafer production of epitaxy-ready 4" GaSb: substrate performance assessments pre- and post-epitaxial growth", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870411 (11 June 2013); doi: 10.1117/12.2016681; https://doi.org/10.1117/12.2016681
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