High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers

Yuksel Ergun; Mustafa Hostut; Tunay Tansel; Abdullah Muti; Abidin Kilic; Rasit Turan; Atilla Aydinli

doi:10.1117/12.2016133

11 June 2013 High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers

Yuksel Ergun, Mustafa Hostut, Tunay Tansel, Abdullah Muti, Abidin Kilic, Rasit Turan, Atilla Aydinli

Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 870414 (2013) https://doi.org/10.1117/12.2016133
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

We report on the development of InAs/AlSb/GaSb based N-structure superlattice pin photodiode. In this new design, AlSb layer in between InAs and GaSb layers acts as an electron barrier that pushes electron and hole wave functions towards the GaSb/InAs interface to perform strong overlap under reverse bias. Experimental results show that, with only 20 periods of intrinsic layers, dark current density and dynamic resistance at -50 mV bias are measured as 6x10^-3 A/cm² and 148 Ωcm² at 77K, respectively. Under zero bias, high spectral response of 1.2A/W is obtained at 5 μm with 50% cut-off wavelengths (λ_c) of 6 μm. With this new design, devices with only 146 nm thick i-regions exhibit a quantum efficiency of 42% at 3 μm with front-side illimunation and no anti-reflection coatings.

Citation Download Citation

Yuksel Ergun, Mustafa Hostut, Tunay Tansel, Abdullah Muti, Abidin Kilic, Rasit Turan, and Atilla Aydinli "High quantum efficiency Type-II superlattice N-structure photodetectors with thin intrinsic layers", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870414 (11 June 2013); https://doi.org/10.1117/12.2016133

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