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11 June 2013 80×80 VPD PbSe: the first uncooled MWIR FPA monolithically integrated with a Si-CMOS ROIC
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In this work a breakthrough in the field of low cost uncooled infrared detectors is presented: an 80x80 MWIR VPD PbSe detector monolithically integrated with the corresponding Si-CMOS circuitry. Fast speed of response and high frame rates are, until date, non existing performances in the domain of low cost uncooled IR imagers. The new detector presented fills the gap. The device is capable to provide MWIR images to rates as high as 2 KHz, full frame, in real uncooled operation which converts it in an excellent solution for being used in applications where short events and fast transients dominate the system dynamics to be studied or detected. VPD PbSe technology is unique because combines all the main requirements demanded for a volume ready technology: 1. Simple processing 2. Good reproducibility and homogeneity 3. Processing compatible with big areas substrates 4. Si-CMOS compatible (no hybridation needed) 5. Low cost optics and packagin The new FPA represents a milestone in the road towards affordable uncooled MWIR imagers and it is the demonstration of VPD PbSe technology has reached industrial maturity. The device presented in the work was processed on 8-inch Si wafers with excellent results in terms of manufacturing yield and repeatability. The technology opens the MWIR band to SWaP concept.
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G. Vergara, R. Linares Herrero, R. Gutíerrez Álvarez, C. Fernández-Montojo, L. J. Gómez, V. Villamayor, A. Baldasano Ramírez, and M. T. Montojo "80×80 VPD PbSe: the first uncooled MWIR FPA monolithically integrated with a Si-CMOS ROIC", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041M (11 June 2013);

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