11 June 2013 Characteristic of nickel oxide microbolometer
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Abstract
Nickel oxide (NiO) film was formed on the SiO2/Si substrate at the room temperature with water cooling system by reactive RF sputter. The feasibility of bolometric material was investigated, and a microbolometer using the NiO film was fabricated and evaluated. The NiO films were analyzed by using grazing-incidence X-ray diffraction (GIXRD). The NiO(111), NiO (200), and NiO (220) peaks expected as the main spectrum were dominantly appeared on the polycrystalline NiO films. The representative resistivity acquired at the O2/(Ar+O2) ratio of 10% sample was about 40.6 Ωcm. The resistivity of 40.6 Ωcm obtained in low oxygen partial pressure was inclined to reduce to 18.65 Ωcm according to the increase of the O2/(Ar+O2) ratio. The TCR value of fabricated microbolometer was −1.67%/℃ at the NiO film resistivity of 40.6 Ωcm. The characteristics of fabricated NiO film and microbolometer were demonstrated by XRD patterns, TCR value, and SEM image.
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Gyo-hun Koo, Gyo-hun Koo, Young-Chul Jung, Young-Chul Jung, Sung-Ho Hahm, Sung-Ho Hahm, Dong-Geon Jung, Dong-Geon Jung, Yong Soo Lee, Yong Soo Lee, "Characteristic of nickel oxide microbolometer", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041P (11 June 2013); doi: 10.1117/12.2015676; https://doi.org/10.1117/12.2015676
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