18 June 2013 Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations
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Abstract
Over the last several years, owing to the implementation of advanced device architectures, antimony-based type-II superlattice (T2-SL) infrared (IR) photodetectors and their focal plane arrays (FPAs) have achieved significant advancements. Here we present our recent effort towards the development of high operating temperature (HOT) mid-IR (MWIR) photodetectors, which utilizes an interband cascade scheme with discrete InAs/GaSb SL absorbers, sandwiched between electron and hole barriers. This low-noise device architecture has enabled background-limited operation above 150 K (300 K, 2π field-of-view), as well as above room temperature response in the mid-IR region. The detector yields a dark current density of 1.10×10-7 A/cm2 (1.44×10-3 A/cm2) at -5 mV, and a Johnson-limited D* of 2.22×1011 cmHz1/2/W (1.58×109 cmHz1/2/W) at 150 K (room temperature) and 3.6 μm, respectively. In this presentation, we will discuss the operation principles of the interband cascade design and our most recent progress in MWIR photodetectors toward high operating temperatures.
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Z.-B. Tian, Z.-B. Tian, T. Schuler-Sandy, T. Schuler-Sandy, S. E. Godoy, S. E. Godoy, H. S. Kim, H. S. Kim, J. Montoya, J. Montoya, S. Myers, S. Myers, B. Klein, B. Klein, E. Plis, E. Plis, S. Krishna, S. Krishna, "Quantum-engineered mid-infrared type-II InAs/GaSb superlattice photodetectors for high temperature operations", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041T (18 June 2013); doi: 10.1117/12.2016125; https://doi.org/10.1117/12.2016125
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