18 June 2013 High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices
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Abstract
We report a bias selectable dual-band Type-II superlattice-based short-wave infrared (SWIR) and mid-wave infrared (MWIR) co-located photodetector capable of active and passive imaging. A new double-layer etch-stop scheme is introduced for back-side-illuminated photodetectors, which enhanced the external quantum efficiency both in the SWIR and MWIR spectral regions. Temperature-dependent dark current measurements of pixel-sized 27 μm detectors found the dark current density to be ~1×10-5 A/cm2 for the ∼4.2 μm cut-off MWIR channel at 140 K. This corresponded to a reasonable imager noise equivalent difference in temperature of ∼49 mK using F⁄2.3 optics and a 10 ms integration time (tint), which lowered to ∼13 mK at 110 K using and integration time of 30 ms, illustrating the potential for high-temperature operation. The SWIR channel was found to be limited by readout noise below 150 K. An excellent imagery from the dual-band imager exemplifying pixel coincidence is shown.
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M. Razeghi, A. M. Hoang, A. Haddadi, G. Chen, S. Ramezani-Darvish, P. Bijjam, P. Wijewarnasuriya, E. Decuir, "High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041W (18 June 2013); doi: 10.1117/12.2019145; https://doi.org/10.1117/12.2019145
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