2.2 micron, uncooled, InGaAs photodiodes, and balanced photoreceivers up to 25 GHz bandwidth

Abhay Joshi; Shubhashish Datta; Mike Lange

doi:10.1117/12.2015593

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18 June 2013 2.2 micron, uncooled, InGaAs photodiodes, and balanced photoreceivers up to 25 GHz bandwidth

Abhay Joshi, Shubhashish Datta, Mike Lange

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Proceedings Volume 8704, Infrared Technology and Applications XXXIX; 87042G (2013) https://doi.org/10.1117/12.2015593
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

We report lattice-mismatched, uncooled, 2.2 µm wavelength cutoff, InGaAs photodiodes and balanced photoreceivers with bandwidth up to 25 GHz. The responsivity at 2.05 µm is 1.2 A/W, and the 1 dB compression, optical current handling of these photodiodes is 10 mA at 7 V reverse bias. Such high current handling capacity allows these photodiodes to operate with a higher DC local oscillator (LO) power, thus, allowing more coherent gain and shot noise limited operation. The impulse response of these devices show rise time / fall time of ~15 ps, and full width half maximum of ~20 ps.

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Abhay Joshi, Shubhashish Datta, and Mike Lange "2.2 micron, uncooled, InGaAs photodiodes, and balanced photoreceivers up to 25 GHz bandwidth", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87042G (18 June 2013); https://doi.org/10.1117/12.2015593

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