18 June 2013 Reduction of dark current density by five orders at high bias and enhanced multicolour photo response at low bias for quaternary alloy capped InGaAs/ GaAs QDIPs, when implanted with low-energy light (H-) ions
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Abstract
Considering the importance of In(Ga)As/GaAs QDIPs, a post-growth method had been developed for enhancing QDIP characteristics using low energy light ion (H-) implantation. Dark current density was reduced by about five orders for the implanted devices due to the reduction in field assisted tunneling process for dark current generation, even at a very high bias of operation. Stronger multicolor mid wavelength photo response (~5.6 µm) was achieved at a very low bias of operation for the implanted device.
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Arjun Mandal, H. Ghadi, Goma Kumari K. C., A. Basu, N. B. V. Subrahmanyam, P. Singh, S. Chakrabarti, "Reduction of dark current density by five orders at high bias and enhanced multicolour photo response at low bias for quaternary alloy capped InGaAs/ GaAs QDIPs, when implanted with low-energy light (H-) ions", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870435 (18 June 2013); doi: 10.1117/12.2016299; https://doi.org/10.1117/12.2016299
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