18 June 2013 Room temperature SWIR sensing from colloidal quantum dot photodiode arrays
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Abstract
While InGaAs-based focal plane arrays (FPAs) provide excellent detectivity and low noise for SWIR imaging applications, wider scale adoption of systems capable of working in this spectral range is limited by high costs, limited spectral response, and costly integration with Si ROIC devices. RTI has demonstrated a novel photodiode technology based on IR-absorbing solution-processed PbS colloidal quantum dots (CQD) that can overcome these limitations of InGaAs FPAs. The most significant advantage of the CQD technology is ease of fabrication. The devices can be fabricated directly onto the ROIC substrate at low temperatures compatible with CMOS, and arrays can be fabricated at wafer scale. Further, device performance is not expected to degrade significantly with reduced pixel size. We present results for upward-looking detectors fabricated on Si substrates with sensitivity from the UV to ~1.7 µm. We further show devices fabricated with larger size CQDs that exhibit spectral sensitivity that extends from UV to 2 µm.
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Ethan Klem, Ethan Klem, Jay Lewis, Jay Lewis, Chris Gregory, Chris Gregory, Garry Cunningham, Garry Cunningham, Dorota Temple, Dorota Temple, Arvind D'Souza, Arvind D'Souza, Ernest Robinson, Ernest Robinson, P. S. Wijewarnasuriya, P. S. Wijewarnasuriya, Nibir Dhar, Nibir Dhar, } "Room temperature SWIR sensing from colloidal quantum dot photodiode arrays", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 870436 (18 June 2013); doi: 10.1117/12.2019521; https://doi.org/10.1117/12.2019521
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