29 May 2013 Continuous p-n junction with extremely low leakage current for micro-structured solid-state neutron detector applications
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Abstract
Considerable progress has been achieved recently to enhance the thermal neutron detection efficiency of solid-state neutron detectors that incorporate neutron sensitive materials such as 10B and 6LiF in Si micro-structured p-n junction diode. Here, we describe the design, fabrication process optimization and characterization of an enriched boron filled honeycomb structured neutron detector with a continuous p+-n junction. Boron deposition and diffusion processes were carried out using a low pressure chemical vapor deposition to study the effect of diffusion temperature on current density-voltage characteristics of p+-n diodes. TSUPREM-4 was used to simulate the thickness and surface doping concentration of p+-Si layers. MEDICI was used to simulate the depletion width and the capacitance of the microstructured devices with continuous p+-n junction. Finally, current density-voltage and pulse height distribution of fabricated devices with 2.5×2.5 mm2 size were studied. A very low leakage current density of ~2×10-8 A/cm2 at -1 V (for both planar and honeycomb structured devices) and a bias-independent thermal neutron detection efficiency of ~26% under zero bias voltage were achieved for an enriched boron filled honeycomb structured neutron detector with a continuous p+-n junction.
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Kuan-Chih Huang, Kuan-Chih Huang, Rajendra Dahal, Rajendra Dahal, James J.-Q. Lu, James J.-Q. Lu, Yaron Danon, Yaron Danon, Ishwara B. Bhat, Ishwara B. Bhat, "Continuous p-n junction with extremely low leakage current for micro-structured solid-state neutron detector applications", Proc. SPIE 8710, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XIV, 87101J (29 May 2013); doi: 10.1117/12.2016121; https://doi.org/10.1117/12.2016121
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