31 May 2013 140-220 GHz imaging front-end based on 250nm InP/InGaAs/InP DHBT process
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This paper presents a pre-amplified detector receiver based on a 250 nm InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) process available from the Teledyne scientific. The front end consists of a double slot antenna followed by a five stage low noise amplifier and a detector, all integrated onto the same circuit. Results of measured responsivity and noise are presented. The receiver is characterized through measuring its response to hot (293) and cold (78) K terminations. Measurements of the voltage noise spectrum at the video output of the receiver are presented and can be used to derive the temperature resolution of the receiver for a specific video bandwidth.
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V. Vassilev, V. Vassilev, H. Zirath, H. Zirath, V. Furtula, V. Furtula, Y. Karandikar, Y. Karandikar, K. Eriksson, K. Eriksson, "140-220 GHz imaging front-end based on 250nm InP/InGaAs/InP DHBT process", Proc. SPIE 8715, Passive and Active Millimeter-Wave Imaging XVI, 871502 (31 May 2013); doi: 10.1117/12.2018397; https://doi.org/10.1117/12.2018397

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