31 May 2013 Micromachined probes for characterization of submillimeter-wave on-wafer components
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Abstract
Terahertz components and devices are typically interfaced with measurement instrumentation and characterized using fixtures equipped with waveguide flanges or antennas. Such fixtures are known to introduce significant uncertainty and error in measurements. It is preferable to characterize such devices in-situ, where the device under test can be measured on-wafer, prior to dicing and separately from the circuit housing to which it is ultimately affixed. This is commonly done in the RF and millimeter-wave region with a probe station equipped with coplanar launchers. Commercial coplanar waveguide probes have generally been available to the WR-2.2 band (325—500 GHz) but few options currently exist for on-wafer measurements above these frequencies. This paper describes recent work at the University of Virginia and Dominion Microprobes, Inc. to extend on-wafer measurement capabilities to terahertz frequencies through the design and implementation of coplanar probes based on silicon micromachining. At present micromachined on-wafer probes operating to WR1.2 (600 to 900 GHz) have been demonstrated and exhibit typical insertion losses lower than 7 dB with return loss of 15 dB or greater over a full waveguide band.
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R. M. Weikle, R. M. Weikle, N. S. Barker, N. S. Barker, A. W. Lichtenberger, A. W. Lichtenberger, M. F. Bauwens, M. F. Bauwens, "Micromachined probes for characterization of submillimeter-wave on-wafer components", Proc. SPIE 8716, Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense, 87160Q (31 May 2013); doi: 10.1117/12.2019784; https://doi.org/10.1117/12.2019784
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