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29 May 2013 Graphene-Si heterogeneous nanotechnology
Deji Akinwande, Li Tao
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Proceedings Volume 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V; 872504 (2013) https://doi.org/10.1117/12.2015149
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States
Abstract
It is widely envisioned that graphene, an atomic sheet of carbon that has generated very broad interest has the largest prospects for flexible smart systems and for integrated graphene-silicon (G-Si) heterogeneous very large-scale integrated (VLSI) nanoelectronics. In this work, we focus on the latter and elucidate the research progress that has been achieved for integration of graphene with Si-CMOS including: wafer-scale graphene growth by chemical vapor deposition on Cu/SiO2/Si substrates, wafer-scale graphene transfer that afforded the fabrication of over 10,000 devices, wafer-scalable mitigation strategies to restore graphene’s device characteristics via fluoropolymer interaction, and demonstrations of graphene integrated with commercial Si- CMOS chips for hybrid nanoelectronics and sensors. Metrology at the wafer-scale has led to the development of custom Raman processing software (GRISP) now available on the nanohub portal. The metrology reveals that graphene grown on 4-in substrates have monolayer quality comparable to exfoliated flakes. At room temperature, the high-performance passivated graphene devices on SiO2/Si can afford average mobilities 3000cm2/V-s and gate modulation that exceeds an order of magnitude. The latest growth research has yielded graphene with high mobilities greater than 10,000cm2/V-s on oxidized silicon. Further progress requires track compatible graphene-Si integration via wafer bonding in order to translate graphene research from basic to applied research in commercial R and D laboratories to ultimately yield a viable nanotechnology.
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Deji Akinwande and Li Tao "Graphene-Si heterogeneous nanotechnology", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 872504 (29 May 2013); https://doi.org/10.1117/12.2015149
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KEYWORDS
Graphene
Copper
Silicon
Raman spectroscopy
Semiconducting wafers
Chemical vapor deposition
Wafer bonding
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