29 May 2013 Emission and detection of terahertz radiation using two dimensional plasmons in semiconductor nano-heterostructures for nondestructive evaluations
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Abstract
This paper reviews recent advances in emission and detection of terahertz radiation using two dimensional (2D) plasmons in semiconductor nano-heterostructures for nondestructive evaluations. The 2D plasmon resonance is introduced as the operation principle for broadband emission and detection of terahertz radiation. The device structure is based on a high-electron mobility transistor and incorporates the authors’ original asymmetrically interdigitated dual grating gates. Excellent terahertz emission and detection performances are experimentally demonstrated by using InAlAs/InGaAs/InP and/or InGaP/InGaAs/GaAs heterostructure material systems. Their applications to nondestructive material evaluation based on terahertz imaging are also presented.
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Taiichi Otsuji, Taiichi Otsuji, Takayuki Watanabe, Takayuki Watanabe, Stephane Albon Boubanga Tombet, Stephane Albon Boubanga Tombet, Akira Satou, Akira Satou, Victor Ryzhii, Victor Ryzhii, Vyacheslav Popov, Vyacheslav Popov, Wojciech Knap, Wojciech Knap, "Emission and detection of terahertz radiation using two dimensional plasmons in semiconductor nano-heterostructures for nondestructive evaluations", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87250F (29 May 2013); doi: 10.1117/12.2015089; https://doi.org/10.1117/12.2015089
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