29 May 2013 Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon
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Abstract
The effects of X-ray and gamma irradiation on the optical properties of CdTe/CdS quantum dots (QDs) immobilized in a functionalized porous silicon film have been investigated via continuous wave and time-resolved photoluminescence measurements. Carrier lifetimes of the QDs and photoluminescence intensities decrease with increasing exposure dose from 500 krad(SiO2) to 16 Mrad(SiO2).
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Girija Gaur, Dmitry Koktysh, Daniel M. Fleetwood, Robert A. Reed, Robert A. Weller, Sharon M. Weiss, "Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87252D (29 May 2013); doi: 10.1117/12.2015595; https://doi.org/10.1117/12.2015595
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