Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

Naoya Iwamoto; Shinobu Onoda; Takahiro Makino; Takeshi Ohshima; Kazutoshi Kojima; Shinji Nozaki

doi:10.1117/12.2016464

29 May 2013 Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector

Naoya Iwamoto, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, Shinji Nozaki

Author Affiliations +

Proceedings Volume 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V; 87252G (2013) https://doi.org/10.1117/12.2016464
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

Radiation hardness of 6H silicon carbide (SiC) p⁺n diode particle detectors has been studied. The charge collection efficiency (CCE) of the detectors decreases with the increased fluence of electrons with energies of 0.2 MeV and higher. Defect X₂ with an activation energy of 0.5 eV was found in all detectors which showed the decreased CCE. The decreased CCE was restored to the initial value by thermal annealing of defect X₂. It is concluded that defect X₂ is responsible for the decreased CCE of 6H-SiC p⁺n diode particle detectors.

Citation Download Citation

Naoya Iwamoto, Shinobu Onoda, Takahiro Makino, Takeshi Ohshima, Kazutoshi Kojima, and Shinji Nozaki "Effects of radiation-induced defects on the charge collection efficiency of a silicon carbide particle detector", Proc. SPIE 8725, Micro- and Nanotechnology Sensors, Systems, and Applications V, 87252G (29 May 2013); https://doi.org/10.1117/12.2016464

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