29 May 2013 Multiple gain mechanisms integrated in APDs biased below breakdown for sensitivity improvement
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Semiconductor photodetectors at1550nm wavelengths have been widely used in free space optical communications, sensing, infrared imaging, and quantum information processing. These detectors require high sensitivity with high detection efficiency and a large dynamic range. But for fundamental material and device limits, all these performances cannot be achieved in a single device under the same operating conditions. To overcome this bottleneck, we integrate three coupled gain mechanisms in a single element device, operating below breakdown to obtain a high net gain and at the same time utilize the negative feedback mechanism to minimize the gain fluctuation. This results in an improved signal to noise ratio, which is the key to obtaining a superior sensitivity. Integration of gain mechanisms in an InP-InGaAs device was analytically modeled and experimentally demonstrated.
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Samia Nawar Rahman, Samia Nawar Rahman, David Hall, David Hall, Zhe Mei, Zhe Mei, Yu Hwa Lo, Yu Hwa Lo, "Multiple gain mechanisms integrated in APDs biased below breakdown for sensitivity improvement", Proc. SPIE 8727, Advanced Photon Counting Techniques VII, 87270P (29 May 2013); doi: 10.1117/12.2018831; https://doi.org/10.1117/12.2018831

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