29 May 2013 Monte Carlo simulation of x-ray photoemission electron microscopic image
Author Affiliations +
Abstract
A new Monte Carlo method is built to describe the generation and transport processes of photoelectrons excited by incident X-ray. XPEEM images for Ag- and Au-dot array on substrate Si are simulated at different incident conditions by the Monte Carlo method. The trajectories of electrons scattered near dot sides and substrate surface were given to visualize the photoelectron penetrating processes. The simulated XPEEM images in TEY mode are found very close to the experimental observations.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. M. Zhang, Z. M. Zhang, T. Tang, T. Tang, S. F. Mao, S. F. Mao, Z. J. Ding, Z. J. Ding, } "Monte Carlo simulation of x-ray photoemission electron microscopic image", Proc. SPIE 8729, Scanning Microscopies 2013: Advanced Microscopy Technologies for Defense, Homeland Security, Forensic, Life, Environmental, and Industrial Sciences, 87290L (29 May 2013); doi: 10.1117/12.2016301; https://doi.org/10.1117/12.2016301
PROCEEDINGS
7 PAGES


SHARE
Back to Top