Advances in AlGaInN laser diode technology for defence applications

S. P. Najda; P. Perlin; T. Suski; L. Marona; M. Boćkowski; M. Leszczyński; A. Kafar; S. Stanczyk; P. Wisniewski; R. Czernecki; R. Kucharski; G. Targowski

doi:10.1117/12.2014753

23 May 2013 Advances in AlGaInN laser diode technology for defence applications

S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, A. Kafar, S. Stanczyk, P. Wisniewski, R. Czernecki, R. Kucharski, G. Targowski

Author Affiliations +

Proceedings Volume 8733, Laser Technology for Defense and Security IX; 873302 (2013) https://doi.org/10.1117/12.2014753
Event: SPIE Defense, Security, and Sensing, 2013, Baltimore, Maryland, United States

Abstract

The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v. to the visible, i.e., 380-530nm, by tuning the indium content of the laser GaInN quantum well. Of specific interest for defence applications is blue-green laser diode technology for underwater telecommunications and sensing applications. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range with high reliability. Low defectivity and highly uniform GaN-substrates allow arrays and bars of nitride lasers to be fabricated. In addition, high power operation of AlGaInN laser diodes is demonstrated with the operation of a single chip, ‘mini-array’ consisting of a 3 stripe common p-contact at powers up to 2.5W cw in the 408-412 nm wavelength range and a 16 stripe common p-contact laser array at powers over 4W cw.

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S. P. Najda, P. Perlin, T. Suski, L. Marona, M. Boćkowski, M. Leszczyński, A. Kafar, S. Stanczyk, P. Wisniewski, R. Czernecki, R. Kucharski, and G. Targowski "Advances in AlGaInN laser diode technology for defence applications", Proc. SPIE 8733, Laser Technology for Defense and Security IX, 873302 (23 May 2013); https://doi.org/10.1117/12.2014753

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