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23 May 2013 Infrared enhanced detection for laser imaging and biometrics
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SiOnyx has developed infrared enhanced CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. The focal plane is color enabled but high transmission of near infrared light allows for near infrared imaging from 850 to 1200 as well. The quantum efficiency enhancements have significant performance benefits in imaging 1064nm laser light as well as 850nm imaging of iris signatures for improved biometric identification.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. U. Pralle, J. E. Carey, H. Homayoon, J. Sickler, X. Li, J. Jiang, F. Sahebi, C. Palsule, and J. McKee "Infrared enhanced detection for laser imaging and biometrics", Proc. SPIE 8734, Active and Passive Signatures IV, 87340H (23 May 2013);


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