4 March 2013 Higher quantum efficiency GaAs photocathode material with exponential-doping structure
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Proceedings Volume 8761, PIAGENG 2013: Image Processing and Photonics for Agricultural Engineering; 87610W (2013) https://doi.org/10.1117/12.2020136
Event: Third International Conference on Photonics and Image in Agriculture Engineering (PIAGENG 2013), 2013, Sanya, China
Abstract
To improve the performance of GaAs NEA photocathodes, an exponential-doping structure GaAs material has been put forward, in which from the GaAs bulk-to-surface doping concentration is distributed exponentially from high to low. We apply this exponential-doping GaAs structure to the transmission-mode GaAs photocathodes. This sample was grown on the high quality p-type Be-doped GaAs (100) substrate by MBE. We have calculated the band-bending energy in exponential-doping GaAs emission-layer, and the total band-bending energy is 59 meV which helps to improve the photoexcited electrons movement towards surface for the thin epilayer. The integrated sensitivity of the exponential-doping GaAs photocathode samples reaches 1547uA/lm.
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Huailin Chen, Wenzheng Yang, Weidong Tang, Xiaoqian Fu, Yujie Du, Junju Zhang, "Higher quantum efficiency GaAs photocathode material with exponential-doping structure", Proc. SPIE 8761, PIAGENG 2013: Image Processing and Photonics for Agricultural Engineering, 87610W (4 March 2013); doi: 10.1117/12.2020136; https://doi.org/10.1117/12.2020136
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