17 May 2013 Analysis of thermal vias in molded interconnect devices
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The ongoing miniaturization of micro-opto-electro-mechanical-systems requires compact multifunctional packaging solutions like offered by the three-dimensional MID (molded interconnect device) technology which combines integrated electronic circuitry and mechanical support structures directly into one compact housing. Due to the inherently large thermal resistance of thermoplastic MID substrate materials, temperature-sensitive applications require carefully arranged thermal vias in order to reduce the thermal resistance of the packaging effectively. This paper presents the analysis and optimization of various laser-drilled thermal via design parameters of MIDs including hole diameter, pitch, plating thickness of the Cu/Ni/Au metallization layers as well as the void level of the filling material inside the vias.
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Jörg Reitterer, Jörg Reitterer, Franz Fidler, Franz Fidler, Ferdinand Saint Julien-Wallsee, Ferdinand Saint Julien-Wallsee, Maximilian Barth, Maximilian Barth, Wolfgang Eberhardt, Wolfgang Eberhardt, Ulrich Keßler, Ulrich Keßler, Heinz Kück, Heinz Kück, Ulrich Schmid, Ulrich Schmid, "Analysis of thermal vias in molded interconnect devices", Proc. SPIE 8763, Smart Sensors, Actuators, and MEMS VI, 87630B (17 May 2013); doi: 10.1117/12.2017361; https://doi.org/10.1117/12.2017361


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