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17 May 2013 Analysis of thermal vias in molded interconnect devices
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Proceedings Volume 8763, Smart Sensors, Actuators, and MEMS VI; 87630B (2013)
Event: SPIE Microtechnologies, 2013, Grenoble, France
The ongoing miniaturization of micro-opto-electro-mechanical-systems requires compact multifunctional packaging solutions like offered by the three-dimensional MID (molded interconnect device) technology which combines integrated electronic circuitry and mechanical support structures directly into one compact housing. Due to the inherently large thermal resistance of thermoplastic MID substrate materials, temperature-sensitive applications require carefully arranged thermal vias in order to reduce the thermal resistance of the packaging effectively. This paper presents the analysis and optimization of various laser-drilled thermal via design parameters of MIDs including hole diameter, pitch, plating thickness of the Cu/Ni/Au metallization layers as well as the void level of the filling material inside the vias.
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Jörg Reitterer, Franz Fidler, Ferdinand Saint Julien-Wallsee, Maximilian Barth, Wolfgang Eberhardt, Ulrich Keßler, Heinz Kück, and Ulrich Schmid "Analysis of thermal vias in molded interconnect devices", Proc. SPIE 8763, Smart Sensors, Actuators, and MEMS VI, 87630B (17 May 2013);

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