17 May 2013 MEMS sensors for mm-range displacement measurements with sub-nm resolution
Author Affiliations +
It is challenging to provide contact measurements of travel in mm-range with nm/sub-nm resolution. It is even more complex to perform such measurements in static regime. In order to respond to the need for a simple, reliable and costeffective tool for contact travel measurements in mm-range with nm/sub-nm resolution, test MEMS sensor with sidewall embedded piezoresistors have been developed. The sensor comprises of two outer members having thickness of 270μm and two symmetrical sets of in-plane compliant elements: differential springs and displacement detection cantilevers, having thickness of 12μm. The MEMS devices have been bonded directly on low-noise amplifier PCB. For detailed characterization of the sensors in mm-travel range, two different experimental setups have been used. Measurements of 0.6 mm travel range at 1nm resolution have been demonstrated experimentally.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir T. Stavrov, Vencislav M. Todorov, Assen A. Shulev, Chavdar M. Hardalov, "MEMS sensors for mm-range displacement measurements with sub-nm resolution", Proc. SPIE 8763, Smart Sensors, Actuators, and MEMS VI, 87632G (17 May 2013); doi: 10.1117/12.2017381; https://doi.org/10.1117/12.2017381

Back to Top