Dense chains of stacked quantum dots in Ge/Si heterostructures

Vladimir A. Yuryev; Larisa V. Arapkina; Mikhail S. Storozhevykh; Oleg V. Uvarov; Victor P. Kalinushkin

doi:10.1117/12.2017072

22 May 2013 Dense chains of stacked quantum dots in Ge/Si heterostructures

Vladimir A. Yuryev, Larisa V. Arapkina, Mikhail S. Storozhevykh, Oleg V. Uvarov, Victor P. Kalinushkin

Proceedings Volume 8766, Nanotechnology VI; 876606 (2013) https://doi.org/10.1117/12.2017072
Event: SPIE Microtechnologies, 2013, Grenoble, France

Abstract

Growth and characterization of Ge/Si(001) heterostructures with dense chains of stacked Ge quantum dots are reported. Ge hut nucleation and growth at low temperatures is discussed on the basis of results obtained by high resolution scanning tunneling microscopy and in-situ reflected high-energy electron diffraction. Atomic-level models of nucleating and growing huts are proposed. Data of high resolution transmission electron microscopy are presented focusing on long chains of Ge quantum dots. New photovoltaic quantum dot infrared photodetectors are proposed.

Citation Download Citation

Vladimir A. Yuryev, Larisa V. Arapkina, Mikhail S. Storozhevykh, Oleg V. Uvarov, and Victor P. Kalinushkin "Dense chains of stacked quantum dots in Ge/Si heterostructures", Proc. SPIE 8766, Nanotechnology VI, 876606 (22 May 2013); https://doi.org/10.1117/12.2017072

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