22 May 2013 A CMOS-compatible silicon photonic platform for high-speed integrated opto-electronics
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Abstract
We have developed a CMOS-compatible Silicon-on-Insulator photonic platform featuring active components such as pi- n and photoconductive (MIM) Ge-on-Si detectors, p-i-n ring and Mach-Zehnder modulators, and traveling-wave modulators based on a p-n junction driven by an RF transmission line. We have characterized the yield and uniformity of the performance through automated cross-wafer testing, demonstrating that our process is reliable and scalable. The entire platform is capable of more than 40 GB/s data rate. Fabricated at the IME/A-STAR foundry in Singapore, it is available to the worldwide community through OpSIS, a successful multi-project wafer service based at the University of Delaware. After exposing the design, fabrication and performance of the most advanced platform components, we present our newest results obtained after the first public run. These include low loss passives (Y-junctions: 0.28 dB; waveguide crossings: 0.18 dB and cross-talk -41±2 dB; non-uniform grating couplers: 3.2±0.2 dB). All these components were tested across full 8” wafers and exhibited remarkable uniformity. The active devices were improved from the previous design kit to exhibit 3dB bandwidths ranging from 30 GHz (modulators) to 58 GHz (detectors). We also present new packaging services available to OpSIS users: vertical fiber coupling and edge coupling.
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Christophe Galland, Christophe Galland, Ari Novack, Ari Novack, Yang Liu, Yang Liu, Ran Ding, Ran Ding, Michael Gould, Michael Gould, Tom Baehr-Jones, Tom Baehr-Jones, Qi Li, Qi Li, Yisu Yang, Yisu Yang, Yangjin Ma, Yangjin Ma, Yi Zhang, Yi Zhang, Kishore Padmaraju, Kishore Padmaraju, Keren Bergmen, Keren Bergmen, Andy Eu-Jin Lim, Andy Eu-Jin Lim, Guo-Qiang Lo, Guo-Qiang Lo, Michael Hochberg, Michael Hochberg, } "A CMOS-compatible silicon photonic platform for high-speed integrated opto-electronics", Proc. SPIE 8767, Integrated Photonics: Materials, Devices, and Applications II, 87670G (22 May 2013); doi: 10.1117/12.2017053; https://doi.org/10.1117/12.2017053
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