14 March 2013 An integrated L-band transceiver in 0.35μm SiGe for radar applications
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Proceedings Volume 8768, International Conference on Graphic and Image Processing (ICGIP 2012); 87687A (2013) https://doi.org/10.1117/12.2002253
Event: 2012 International Conference on Graphic and Image Processing, 2012, Singapore, Singapore
Abstract
An integrated high linear L-band transceiver with an on-chip fault detector is demonstrated. The transmitter and receiver exhibit an output 1dB compression point (OP1dB) of 12dBm and 15dBm respectively under 3.3V operation voltage. The transceiver has high linearity and low power consumption. The transceiver works at a time division mode by adopting an on-chip switch for radar applications. The measurement result shows an isolation of 64dBc between the transmitter and receiver. The transceiver is fabricated in a standard 0.35 um SiGe technology with a chip area of 2.5 mm × 3.3 mm, including contact pads.
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Song Ye, Song Ye, Jun Fan, Jun Fan, } "An integrated L-band transceiver in 0.35μm SiGe for radar applications", Proc. SPIE 8768, International Conference on Graphic and Image Processing (ICGIP 2012), 87687A (14 March 2013); doi: 10.1117/12.2002253; https://doi.org/10.1117/12.2002253
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