22 June 2013 Optical metrology of semiconductor wafers in lithography
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Proceedings Volume 8769, International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013); 876907 (2013) https://doi.org/10.1117/12.2021169
Event: International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013), 2013, Singapore, Singapore
Abstract
This paper presents a concise description of 3 optical measurement systems that play a critical role in optical lithography of semiconductor devices. A level sensor and alignment sensor are described that are used to measure, respectively, wafer height variations and the wafer location prior to resist exposure. The third sensor is an angle-resolved scatterometer that is used to measure the shape (CD) and placement (Overlay) of the resist patterns. It will be shown how these sensors deal with the common challenge of realizing sub-nm precision on a large variety of product stacks in the presence of process variations.
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Arie J. den Boef, Arie J. den Boef, } "Optical metrology of semiconductor wafers in lithography", Proc. SPIE 8769, International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013), 876907 (22 June 2013); doi: 10.1117/12.2021169; https://doi.org/10.1117/12.2021169
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