22 June 2013 White light blinded IR photo-detection of a Si-based MIS structure with multi-dielectric layers
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Proceedings Volume 8769, International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013); 87691W (2013) https://doi.org/10.1117/12.2018955
Event: International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013), 2013, Singapore, Singapore
Abstract
We demonstrate the fabrication of a white light blinded IR photo-detector sing a Si based metal insulator semiconductor (MIS) structure with multi-layers of SiO2/TiO2 dielectric and its characteristics of photo -responsivity. Spectral responsivity peak at 850 nm with high discrimination in visible light had been achieved in a MIS photo -detector with multiple layers of SiO2/TiO2 dielectrics. Reflection spectral measurements and I -V characteristics of the SiO2/TiO2 multi-layers with various layer number and thickness were used to explore the photo -detection in this MIS device structure. We found that high spectral discrimination of visible light of this multi-dielectric layers MIS device is due to the optical filtering property by these multi -layers and the mid-band gap impurity states existed at the interface between the Si substrate and these dielectric layers.
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Shing Wei Fang, H. J. Chen, Ming Chang Shih, "White light blinded IR photo-detection of a Si-based MIS structure with multi-dielectric layers", Proc. SPIE 8769, International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013), 87691W (22 June 2013); doi: 10.1117/12.2018955; https://doi.org/10.1117/12.2018955
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