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18 May 1988 Diamond Synthesis By Hollow Cathode Plasma Assisted Chemical Vapor Deposition
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Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988)
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
A method which combines thermal and plasma dissociation of a methane/hydrogen gas mixture for low pressure chemical vapor deposition of diamond is described. A hot, thin-walled, refractory metal cathode is used to generate a high-current, low-voltage discharge. The substrates are located on the anode and immersed in the plasma emanating from the cathode tip. No auxiliary substrate heating is employed. Polycrystalline diamond particles and films are obtained on silicon (100) and molybdenum substrates at growth rates of 1-3 μm/hour. Data on the effects on diamond growth of the various pro-cess parameters along with some operating characteristics of the hollow cathode are presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Singh, O R Mesker, A W Levine, and Y Arie "Diamond Synthesis By Hollow Cathode Plasma Assisted Chemical Vapor Deposition", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988);

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