Physical Properties Of Ceramic-Glass-Copper Micro-Interconnect Systems For VLSI/VHSIC Packaging Applications

D L Shealy; H T Tohver; D A Hill; Z Shehadeh; G Srinivasan; R G Thompson; J Shyu

doi:10.1117/12.943947

18 May 1988 Physical Properties Of Ceramic-Glass-Copper Micro-Interconnect Systems For VLSI/VHSIC Packaging Applications

D L Shealy, H T Tohver, D A Hill, Z Shehadeh, G Srinivasan, R G Thompson, J Shyu

Author Affiliations +

Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988) https://doi.org/10.1117/12.943947
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

The demands of increased circuit density and higher signal propagation speeds have combined to substantially increase the importance of micro-interconnect in the packaging of electronic devices. Interconnect and packaging technology have become important factors that limit the performance and reliability of microelectronic devices. To overcome these limitations, many groups 1-6 are considering new materials for microelectronic packaging applications. In this paper, the thermal and electrical properties of partially reactive cordierite and fully reactive cordierite substrates, which have been doped with glass and processed in different manners, will be reported. The dependence of the dielectric constant of the substrate on processing, composition, sintering temperature, and frequency of the applied field from 1KHz to 18GHz will be presented. The thermal conductivity of the substrate as a function of the processing and composition has also been studied. Preliminary data on the bonding of copper microstrips to the ceramic substrate will be reported.

Citation Download Citation

D L Shealy, H T Tohver, D A Hill, Z Shehadeh, G Srinivasan, R G Thompson, and J Shyu "Physical Properties Of Ceramic-Glass-Copper Micro-Interconnect Systems For VLSI/VHSIC Packaging Applications", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); https://doi.org/10.1117/12.943947

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