Interaction of laser light with the AIIIBVI layered semiconductors: nonlinear optical applications

Kerim Allakhverdiev

doi:10.1117/12.2013645

15 March 2013 Interaction of laser light with the A^IIIB^VI layered semiconductors: nonlinear optical applications

Kerim Allakhverdiev

Proceedings Volume 8770, 17th International School on Quantum Electronics: Laser Physics and Applications; 877003 (2013) https://doi.org/10.1117/12.2013645
Event: Seventeenth International School on Quantum Electronics: Laser Physics and Applications, 2012, Nessebar, Bulgaria

Abstract

One of the most prominent nonlinear optical (NLO) material among A^IIIB^VI class of crystals is GaSe (gallium selenide), which is called by the scientific community in the world as an ″outstanding″ NLO material or material with an ″outstanding″ NLO properties. NLO properties of GaSe has been investigated first in 1972 and may be summurized as follows: i) very high NLO coefficient d₂₂ = 86 ± 17 pm/V; ii) wide transparency range of 0.7 - 18 μm with the linear absorption coefficient less than α ≤ 0.3 cm^-1; iii) high birefringence Δn = n_o - n_e ≈ 0.28 (λ = 1.06 μm); iv) nonlinearity in the phase-matched direction: d_eff = -d₂₂cosθsin3φ (e = e + o) (where θ is angle between the wave vector K of the pump radiation and the optical c-axis and φ-is the angle between the crystal planes XZ and KZ; e and o is for extraordinary and ordinary wave, respectively); v) phase-matching angle θ for the second harmonic generation (SHG) at the pump wavelength λ = 2.36 μm is θ = 18°40' ± 10'; θ = 10°10' ± 20' (λ = 5.3 μm); θ = 12°40' ± 20'; (λ = 10.6 μm); vi) high value of the two photon absorption (TPA) coefficient (≈10^-7 cm/W at λ = 1.06 μm; vii) high power threshold for optical damage of ≈ 2 x 107 W/cm² (λ = 0.694 μm, τ p = 25 ns), ≈ 3.5 x 107 W/cm² (λ = 1.06 μm, τ p = 10 ns), ≈ 25 MW/cm² (λ = 9.3 μm, f = 20 Hz), ≈ 100 W/cm² (λ = 0.8 μm). The NLO properties of A^III B^VI compounds and some of their solid solutions including perspectives for future research and applications in the THz range of spectra are considered in the present article with emphasis on GaSe bulk crystals as well as nanoparticles.

Citation Download Citation

Kerim Allakhverdiev "Interaction of laser light with the A^IIIB^VI layered semiconductors: nonlinear optical applications", Proc. SPIE 8770, 17th International School on Quantum Electronics: Laser Physics and Applications, 877003 (15 March 2013); https://doi.org/10.1117/12.2013645

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