15 March 2013 Laser induced changes of the optical properties of obliquely deposited thin chalcogenide films
Author Affiliations +
Proceedings Volume 8770, 17th International School on Quantum Electronics: Laser Physics and Applications; 87700A (2013) https://doi.org/10.1117/12.2013735
Event: Seventeenth International School on Quantum Electronics: Laser Physics and Applications, 2012, Nessebar, Bulgaria
Abstract
The object of the present work is investigation of the role of the actual conditions of illumination on the magnitude of photo-darkening for a specific material (the incident photon flux and the penetration depth of absorbed photons). It was found that the photo-induced changes in the thin As2S3 film depend on the light intensity and they are affected by heating of the material at higher laser intensities. The influence of the deposition rate on the film’s microstructure was investigated. The conditions for deposition of coatings with columnar structure were determined. The photo-induced changes of the optical properties of the obliquely deposited thin As40-xGexS60 films are examined. It was established that the microstructure of thin As-Ge-S films can a play significant role in photo-induced volume changes.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Lalova, A. Lalova, R. Todorov, R. Todorov, } "Laser induced changes of the optical properties of obliquely deposited thin chalcogenide films", Proc. SPIE 8770, 17th International School on Quantum Electronics: Laser Physics and Applications, 87700A (15 March 2013); doi: 10.1117/12.2013735; https://doi.org/10.1117/12.2013735
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT


Back to Top