15 March 2013 Electrical conductivity of the LiNbO3 heterostructures grown by ion sputtering method
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Proceedings Volume 8770, 17th International School on Quantum Electronics: Laser Physics and Applications; 87701M (2013) https://doi.org/10.1117/12.2011201
Event: Seventeenth International School on Quantum Electronics: Laser Physics and Applications, 2012, Nessebar, Bulgaria
Abstract
The polycrystalline LiNbO3 films were grown by the ion-beam sputtering method on (001)Si substrates. Dielectric losses of the grown (001)Si-LiNbO3 arises from conductivity of LiNbO3 films and increases when temperature rises. Ac conductivity of the studied heterostructures is described by the correlated-barrier hopping (CBH) model and it is induced by the jumps of charge carries between charge centers with concentration D = 3,5·1022 m-3.
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V. Ievlev, M. Sumets, A. Kostuchenko, "Electrical conductivity of the LiNbO3 heterostructures grown by ion sputtering method", Proc. SPIE 8770, 17th International School on Quantum Electronics: Laser Physics and Applications, 87701M (15 March 2013); doi: 10.1117/12.2011201; https://doi.org/10.1117/12.2011201
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