15 March 2013 Laser characterization of the depth profile of complex refractive index of PMMA implanted with 50 keV silicon ions
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Proceedings Volume 8770, 17th International School on Quantum Electronics: Laser Physics and Applications; 87701N (2013) https://doi.org/10.1117/12.2011989
Event: Seventeenth International School on Quantum Electronics: Laser Physics and Applications, 2012, Nessebar, Bulgaria
Abstract
The depth profile of the complex refractive index of silicon ion (Si+) implanted polymethylmethacrylate (PMMA) is studied, in particular PMMA implanted with Si+ ions accelerated to a relatively low energy of 50 keV and at a fluence of 3.2 × 1015 cm-2. The ion-modified material with nano-clustered structure formed in the near(sub)surface layer of a thickness of about 100 nm is optically characterized by simulation based on reflection ellipsometry measurements at a wavelength of 632.8 nm (He-Ne laser). Being of importance for applications of ion-implanted PMMA in integrated optics, optoelectronics and optical communications, the effect of the index depth profile of Si+-implanted PMMA on the profile of the reflected laser beam due to laser-induced thermo-lensing in reflection is also analyzed upon illumination with a low power cw laser (wavelength 532 nm, optical power 10 – 50 mW).
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Ivan L. Stefanov, Hristiyan Y. Stoyanov, Elitza Petrova, Stoyan C. Russev, Gichka G. Tsutsumanova, Georgi B. Hadjichristov, "Laser characterization of the depth profile of complex refractive index of PMMA implanted with 50 keV silicon ions", Proc. SPIE 8770, 17th International School on Quantum Electronics: Laser Physics and Applications, 87701N (15 March 2013); doi: 10.1117/12.2011989; https://doi.org/10.1117/12.2011989
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