Paper
8 May 2013 Silicon nitride waveguide with flattened chromatic dispersion
J. M. Chavez Boggio, D. Bodenmueller, T. Fremberg, R. Haynes, M. M. Roth, R. Eisermann, L. Zimmermann, M. Bohm
Author Affiliations +
Abstract
Dispersion engineering in integrated silicon nitride waveguides is numerically and experimentally investigated. We show that by modifying the transversal dimensions of the silicon nitride core, it is possible to have a good control of the chromatic dispersion. The inaccuracies due to typical fabrication process in PECD-SiXNY films shows that the dispersion uncertainty is in the order of 20 ps/nm-km at 1550 nm. Silicon nitride waveguides were then fabricated using the same PECVD process and the chromatic dispersion was measured using a low-coherence frequency domain interferometry technique. A comparison between measurements and simulations shows good agreement.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. M. Chavez Boggio, D. Bodenmueller, T. Fremberg, R. Haynes, M. M. Roth, R. Eisermann, L. Zimmermann, and M. Bohm "Silicon nitride waveguide with flattened chromatic dispersion", Proc. SPIE 8772, Nonlinear Optics and Applications VII, 87720R (8 May 2013); https://doi.org/10.1117/12.2017302
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Dispersion

Waveguides

Silicon

Refractive index

Objectives

Beam splitters

Mirrors

Back to Top