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8 May 2013 Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers
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Abstract
We introduce an analytical approach to the description of broadband lasing spectra of semiconductor quantum dot lasers emitting via ground-state optical transitions of quantum dots. The explicit analytical expressions describing the shape and the width of lasing spectra as well as their temperature and injection current dependences are obtained in the case of low homogeneous broadening. It is shown that in this case these dependences are determined by only two dimensionless parameters, which are the dispersion of the distribution of QDs over the energy normalized to the temperature and loss-to-maximum gain ratio. The possibility of optimization of laser’s active region size and structure by using the intentionally introduced disorder is also carefully considered.
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Vladimir V. Korenev, Artem V. Savelyev, Alexey E. Zhukov, Alexander V. Omelchenko, and Mikhail V. Maximov "Analytical model of ground-state lasing phenomenon in broadband semiconductor quantum dot lasers", Proc. SPIE 8772, Nonlinear Optics and Applications VII, 87720W (8 May 2013); https://doi.org/10.1117/12.2017525
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