8 May 2013 Electronic structure of KTiOAsO4, a novel material for non-linear optical applications
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Abstract
A high-quality KTiOAsO4 (KTA) single crystal has been successfully synthesized employing the high temperature solution growth technique with rotating and pooling. The XPS valence-band spectra have been measured for pristine and the 1.5 keV Ar+ ion-bombarded thin (001)KTA plate cut from the crystal part that was without any optical inhomogeneities or domain boundaries. The present XPS measurements have revealed the existence of two O 2s subbands on the XPS spectrum of the pristine (001)KTA surface. It has been established that 1.5 keV Ar+ ion bombardment of the (001)KTA surface causes the complete elimination of the O 2s sub-band related to oxygen atoms involved in the formation of Ti–O–As bonds in KTA. In addition, the XPS results reveal that such a treatment leads to a significant decrease of the relative intensity of the XPS As5+ 3d core-level spectrum and causes the formation of the additional As0 3d core-level spectrum in the topmost layer of the (001)KTA surface. The experimental data are compared to the results of the first-principles band-structure calculations of KTA.
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Victor Atuchin, Oleg Y. Khyzhun, V.L. Bekenev, A.K. Sinelnichenko, L. I. Isaenko, S. A. Zhurkov, "Electronic structure of KTiOAsO4, a novel material for non-linear optical applications", Proc. SPIE 8772, Nonlinear Optics and Applications VII, 87721I (8 May 2013); doi: 10.1117/12.2017597; https://doi.org/10.1117/12.2017597
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