8 May 2013 Optimal doping of GaSe with isovalent elements
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Abstract
The сentimeter-sized GaSe crystals doped with 0.01, 0.05, 0.1, 0.2, 0.5, 1, 2 at.% of Al and 0.025, 0.1, 0.5, 1,2 at. % of Er have been grown by the modified Bridgman method with heat field rotation. The crystals have been studied in comparison with GaSe crystals doped with 0.1, 0.5, 1, 2, 3, 5, 7, 10.2 wt.% of S, 0.01, 0.1, 0.5, 1, 2, 3, 5 wt.% of In and 0.01, 0.1, 0.5, 1, 2 wt. % of Te grown by the conventional Bridgman method. The distribution coefficient of Al in the grown GaSe:Al (≥0.1 at.%) crystals has been estimated to be ∼8⋅10-3 and it is within the range of 10-2-10-3 in Er-doped crystals. For the first time, the optimal doping levels have been estimated for Al and Er in GaSe as 0.01- 0.05 at.% for Al and ~ 0.5 wt.% for Er, respectively.
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Victor V. Atuchin, Victor V. Atuchin, Yury M. Andreev, Yury M. Andreev, Konstantin A. Kokh, Konstantin A. Kokh, Grigory V. Lanskii, Grigory V. Lanskii, Anna V. Shaiduko, Anna V. Shaiduko, T. I. Izaak, T. I. Izaak, V. A. Svetlichnyi, V. A. Svetlichnyi, } "Optimal doping of GaSe with isovalent elements", Proc. SPIE 8772, Nonlinear Optics and Applications VII, 87721Q (8 May 2013); doi: 10.1117/12.2017059; https://doi.org/10.1117/12.2017059
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