3 May 2013 Theoretical investigation of scattering properties of crystal exposed to the XFEL femtosecond pulse
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Interaction of the X-ray Free Electron Laser (XFEL) femtosecond pulses with a crystal is investigated beyond the means of the conventional linear response theory. In order to analyze the time dependence of the X-ray scattering properties of a crystal we analyze the electron density evolution on the basis of rate equations.1 In order to take into account the influence of the electron plasma that appears due to the ionization of the atoms of a crystal we couple the system of rate equations to the Boltzmann kinetic equation. As a result, the system of master equations involves such evolution channels as: photoionization, Auger recombination, electron impact ionization, electron-electron scattering and three body recombination. In order to consider these channels effectively expressions for the cross sections of these processes are calculated within the framework of the effective charge approximation.2 The numerical algorithm and software are developed for calculation of the intensity of the diffraction reflection of the XFEL pulse taking into account the specific characteristics of the kinetic processes in a crystal. Numerical results are analyzed on the example of the Si crystal in the wide range of the pulse parameters variation.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Aleksandr Leonov, Aleksandr Leonov, Dmitriy Ksenzov, Dmitriy Ksenzov, Andrei Benediktovitch, Andrei Benediktovitch, Ilya Feranchuk, Ilya Feranchuk, Ullrich Pietsch, Ullrich Pietsch, "Theoretical investigation of scattering properties of crystal exposed to the XFEL femtosecond pulse", Proc. SPIE 8777, Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III, 87770E (3 May 2013); doi: 10.1117/12.2017453; https://doi.org/10.1117/12.2017453

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