3 May 2013 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV, and soft x-ray detection: design, technology, and performance testing
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Abstract
Work reports on results in development of 4H-SiC and semi-insulating (SI) GaAs large area surface barrier detectors. 4H-SiC detectors are based on high purity liquid phase epitaxy layer with the Schottky barrier contact formed by semitransparent Ni. SI GaAs detectors are based on bulk undoped material using novel electrode metallization with improved sensitivity in UV and soft X-ray ranges. The novel detector use semitransparent low work function Mg metal contact giving a new electronic characteristic of the junction. Electrical characteristics of the diodes, photocurrent measurements and pulse height spectra of gamma and low energy X-rays using the 241Am source, are presented. Improvement of 4H-SiC detector resistance to gamma radiation and neutron fluency is demonstrated. Problems with design and application of related ultra-low noise electronics are introduced and discussed.
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František Dubecký, František Dubecký, Jaroslav Kováč, Jaroslav Kováč, Bohumír Zaťko, Bohumír Zaťko, Jirí Oswald, Jirí Oswald, Pavel Hubík, Pavel Hubík, Dobroslav Kindl, Dobroslav Kindl, Gabriel Vanko, Gabriel Vanko, Enos Gombia, Enos Gombia, Claudio Ferrari, Claudio Ferrari, Pavol Boháček, Pavol Boháček, Andrea Šagátová, Andrea Šagátová, Vladimír Nečas, Vladimír Nečas, Mária Sekáčová, Mária Sekáčová, } "4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV, and soft x-ray detection: design, technology, and performance testing", Proc. SPIE 8777, Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III, 87771K (3 May 2013); doi: 10.1117/12.2021729; https://doi.org/10.1117/12.2021729
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