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24 January 2013 Investigation of Sb-rich Sb-Te binary films used as phase change material
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Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820H (2013) https://doi.org/10.1117/12.2014873
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China
Abstract
Sb-rich Sb-Te films with different composition were investigated by temperature-dependent resistance measurement, crystal structure characterization, and in situ crystallization behavior study. The results show that when the Sb content is more than 80 at.%, Sb-rich Sb-Te films cannot be used as phase change material due to their low crystallization temperature and small resistance contrast. Sb-rich Sb-Te films with the Sb content being between 80~67 at.% can be used as phase-change-material and they have similar properties because of their similar growth-dominant crystallization behaviors.
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Yan Cheng, Yifeng Gu, Zhitang Song, Sannian Song, Feng Rao, Liangcai Wu, Bo Liu, and Songlin Feng "Investigation of Sb-rich Sb-Te binary films used as phase change material", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820H (24 January 2013); https://doi.org/10.1117/12.2014873
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