24 January 2013 Phase change materials for multi-level storage phase change memory
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Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820I (2013) https://doi.org/10.1117/12.2016744
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China
Abstract
A phase change memory cell based on Ge0.5Sb2Te3/Ti0.6Sb2Te3 double-layer structure is proposed for 3-level storage. The fabricated cell can realize 3-level storage ability by both current and voltage operation. Cycling ability has been proved better than 2×103. Thermal simulation shows that the resistivity difference between the two materials can greatly affect the temperature distribution in the cell. More heat will be generated in the amorphous Ge Ge0.5Sb2Te3/ film when the current flow through due to the higher resistivity. And the lower crystallization temperature of Ge0.5Sb2Te3/compared to that of Ti0.6Sb2Te3 ensures its priority of crystallization, which makes the 3-level storage feasible.
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Kun Ren, Kun Ren, Feng Rao, Feng Rao, Zhitang Song, Zhitang Song, Min Zhu, Min Zhu, Yuefeng Gong, Yuefeng Gong, Liangcai Wu, Liangcai Wu, Bo Liu, Bo Liu, Songlin Feng, Songlin Feng, } "Phase change materials for multi-level storage phase change memory", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820I (24 January 2013); doi: 10.1117/12.2016744; https://doi.org/10.1117/12.2016744
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