24 January 2013 A comparison of the Ge-Sb-Te and Si-Sb-Te film oxidization at atmosphere
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Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820J (2013) https://doi.org/10.1117/12.2017630
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China
Abstract
New phase change materials development has become one of the most critical modules in the fabrication of low power consumption and good data retention phase change memory (PCM). Among various candidates of new phase change materials, SiSbTe (SST) is one of the most promising materials due to its benefits of low RESET current, high crystallization temperature, good adhesion and small volume shrinkage during phase change from amorphous to crystalline state. However, the oxidization of SST film was found when exposing to the atmosphere. By analyzing the depth profile of chemical states, we found oxygen more easily penetrated into the SST film and bonded with Si and Sb compared to GeSbTe (GST) film. The oxidization mechanism between SST and GST was briefly discussed. We achieved 80% improvement of oxidization issue by nitrogen and argon surface treatment. We proposed a manufacturing solution of SST for PCM.
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Wanchun Ren, Bo Liu, Zhitang Song, Xuezhen Jing, Yanghui Xiang, Haibo Xiao, Zongtao Wang, Beichao Zhang, Jia Xu, Guanping Wu, Ruijuan Qi, Chunyan Fan, Shuqing Duan, Qinqin Yu, Songlin Feng, "A comparison of the Ge-Sb-Te and Si-Sb-Te film oxidization at atmosphere", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820J (24 January 2013); doi: 10.1117/12.2017630; https://doi.org/10.1117/12.2017630
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