24 January 2013 Reactive etching of a novel phase change material Si2Sb2Te3
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Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820Z (2013) https://doi.org/10.1117/12.2016674
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China
Abstract
A novel phase change material, Si2Sb2Te3 has been reported to show good phase change abilities. Etching of this material is a critical step in the fabrication of phase change memory devices. In this paper, the characteristics of Si2Sb2Te3 etched in CF4/Ar atmosphere are investigated. The influence of the etching rate and surface roughness with different CF4/Ar ratio, pressure, and power are systematically studied. Furthermore, our X-ray photoelectron spectroscopy test results show that Te is the bottleneck to accelerating the etching rate.
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Mengjiao Xia, Mengjiao Xia, Feng Rao, Feng Rao, Zhitang Song, Zhitang Song, Kun Ren, Kun Ren, Liangcai Wu, Liangcai Wu, Bo Liu, Bo Liu, } "Reactive etching of a novel phase change material Si2Sb2Te3", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820Z (24 January 2013); doi: 10.1117/12.2016674; https://doi.org/10.1117/12.2016674
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