Analysis of anomalous cells within RESET distribution for phase change memory

Linhai Xu; Xiaogang Chen; Zhitang Song; Yifeng Chen; Bo Liu; Houpeng Chen; Zuoya Yang; Guanping Wu; Daolin Cai; Gaoming Feng; Ying Li

doi:10.1117/12.2018220

24 January 2013 Analysis of anomalous cells within RESET distribution for phase change memory

Linhai Xu, Xiaogang Chen, Zhitang Song, Yifeng Chen, Bo Liu, Houpeng Chen, Zuoya Yang, Guanping Wu, Daolin Cai, Gaoming Feng, Ying Li

Author Affiliations +

Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 878212 (2013) https://doi.org/10.1117/12.2018220
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China

Abstract

Resistance distributions of the crystalline (SET) state and amorphous (RESET) state for phase change memory (PCM) are experimentally investigated at the array level. The RESET distribution shows a low resistance tail, which potentially affects the reading margin of the chip. These tail cells are divided into two types by resistance programming current (R-IP) and current voltage (I-V) characteristics. Finally, approaches of improving the integration process to remove the Type-1 tail cells and optimizing the programming operation to repair the Type-2 tail cells are proposed.

Citation Download Citation

Linhai Xu, Xiaogang Chen, Zhitang Song, Yifeng Chen, Bo Liu, Houpeng Chen, Zuoya Yang, Guanping Wu, Daolin Cai, Gaoming Feng, and Ying Li "Analysis of anomalous cells within RESET distribution for phase change memory", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 878212 (24 January 2013); https://doi.org/10.1117/12.2018220

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