Schottky-barrier diode array fabrication with self-aligned Ni silicidation for low power phase-change memory application

Yan Liu; Zhitang Song; Bo Liu; Houpeng Chen; Guanping Wu; Chao Zhang; Lianhong Wang; Lei Wang; Songlin Feng

doi:10.1117/12.2018456

24 January 2013 Schottky-barrier diode array fabrication with self-aligned Ni silicidation for low power phase-change memory application

Yan Liu, Zhitang Song, Bo Liu, Houpeng Chen, Guanping Wu, Chao Zhang, Lianhong Wang, Lei Wang, Songlin Feng

Author Affiliations +

Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 878213 (2013) https://doi.org/10.1117/12.2018456
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China

Abstract

A high density design of Schottky-barrier diode array with self-aligned nickel-silicidation under 40nm technology node fabricated on epitaxial layer for low power phase-change memory application is proposed. According to N-type doping profile from simulation, large ON/OFF current ratio, the lower barrier height of ФB and series resistance RS are all determined by the dosage of buried N+ layer, epitaxial layer thickness. In addition, the temperature effect of the Schottky diode array is demonstrated by I-V electrical characteristics. From the optimal silicon-based results, a 9F² 16 × 16 diode array with the ideality factor of 1.21~1.40 shows a drive current density of ~14.9 mA/μm², a J_on/J_off ratio of ~5.17×103, and crosstalk immunity. Furthermore, this calibrated physical model makes it possible to predict and improve the performance of accessing device array next generation for non-volatile memory application.

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Yan Liu, Zhitang Song, Bo Liu, Houpeng Chen, Guanping Wu, Chao Zhang, Lianhong Wang, Lei Wang, and Songlin Feng "Schottky-barrier diode array fabrication with self-aligned Ni silicidation for low power phase-change memory application", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 878213 (24 January 2013); https://doi.org/10.1117/12.2018456

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