24 January 2013 A write driver for phase change memory based on programming current/voltage
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Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 878215 (2013) https://doi.org/10.1117/12.2018546
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China
Abstract
A write driver for PCM is designed to improve reliability and bit yield in the write operation, due to the distributions during the phase change process. And the PCM cell can be injected by current or voltage respectively. Meanwhile, owing to the possible variations of the SET process parameters, the designed circuit can generate either multiple stepdown current pulse or multiple step-down voltage pulse. The circuit is developed based on SMIC 130 nm CMOS standard technology. Compared to the traditional constant current pulse programming, the test results show that the proposed multiple step-down current generator for SET operation can improve the uniformity of resistance and bit yield.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xi Fan, Xi Fan, Houpeng Chen, Houpeng Chen, WeiYi Xu, WeiYi Xu, Qian Wang, Qian Wang, Daolin Cai, Daolin Cai, Rong Jin, Rong Jin, Xiao Hong, Xiao Hong, Xi Li, Xi Li, Yifeng Chen, Yifeng Chen, ZhiTang Song, ZhiTang Song, } "A write driver for phase change memory based on programming current/voltage", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 878215 (24 January 2013); doi: 10.1117/12.2018546; https://doi.org/10.1117/12.2018546
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