9 July 2013 Hot-pressed Cr:ZnSe ceramic as mid-infrared laser material
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Proceedings Volume 8786, Pacific Rim Laser Damage 2013: Optical Materials for High Power Lasers; 87860L (2013) https://doi.org/10.1117/12.2020424
Event: SPIE/SIOM Pacific Rim Laser Damage: Optical Materials for High-Power Lasers, 2013, Shanghai, China
Abstract
In order to mitigate the dopant concentration gradient by post-growth diffusion method, high optical quality Cr2+:ZnSe ceramics had been prepared by hot-pressing method with powders being diffusion doped in a previous step, which reduced the concentration gradient down to a grain size level. A optimal combination of sintering parameters, including temperature, pressure, dwell time, have been determined (1050°C/150MPa/2h) according to background absorption intensity. Comparison with diffusion doped CVD-grown ZnSe showed a stronger background absorption and blueshifted emission peak, both indicating scattering sources inside material. Micro-structure observation proved the inference above as being residual pores and inclusions, which could be eliminated or reduced by, as suggested here, preliminary treatment of powders and enhancement of densification pressure and dwell time.
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Min Chen, Wei Li, Huamin Kou, Benxue Jiang, Yubai Pan, "Hot-pressed Cr:ZnSe ceramic as mid-infrared laser material", Proc. SPIE 8786, Pacific Rim Laser Damage 2013: Optical Materials for High Power Lasers, 87860L (9 July 2013); doi: 10.1117/12.2020424; https://doi.org/10.1117/12.2020424
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