13 May 2013 Metrology for adhesive layer of temporary bonding wafers using IR interferometry
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Abstract
We have demonstrated a full-field IR wavelength scanning interferometry system for the adhesive thickness measurement which in between the temporary bonded wafer and a carrier wafer. The illumination wavelength can be varied and selected by tilting the angle of interference filter along the main optical axis. The varying wavelength was calibrated by a commercial spectrometer. By combining the phase-shifting technique and the spectrum curve fitting method, the total thickness variation (TTV) of the adhesive layer and the adhesive thickness distribution map can be obtained. The experimental results showed that the TTV of the adhesive is 3.76 μm within the area of 110 mm diameter. The thickness variation is in a range from 16.47 μm to 20.23μm.
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Po-Yi Chang, Po-Yi Chang, Yi-Sha Ku, Yi-Sha Ku, Chia-Hung Cho, Chia-Hung Cho, } "Metrology for adhesive layer of temporary bonding wafers using IR interferometry", Proc. SPIE 8788, Optical Measurement Systems for Industrial Inspection VIII, 878804 (13 May 2013); doi: 10.1117/12.2020437; https://doi.org/10.1117/12.2020437
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